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Electron mobility in compensated semiconductors at low temperatures

โœ Scribed by Kar, R. K. ;Mukherjee, M. N.


Publisher
Springer-Verlag
Year
1970
Weight
181 KB
Volume
237
Category
Article
ISSN
0044-3328

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Dislocation mobility in LiF at low tempe
โœ Prof. Dr. Takayoshi Suzuki; Kazuo Nakamura ๐Ÿ“‚ Article ๐Ÿ“… 1984 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 460 KB

Dedicated to Professor V. I. STARTSEV on the occasion of his 70th birthday The mobility of dislocations in LiF has been measured a t 4.2 and 10 K by means of an etch pit technique. The average velocity of screw dislocations is 2-5 times as large as edge dislocations. The results of the stress and t