## Abstract This article presents a new divide‐by‐2 injection‐locked frequency divider (ILFD). The ILFD consists of a 2.1‐GHz top‐series quadrature voltage‐controlled oscillator (QVCO) and two NMOS switches, which are in parallel with the QVCO resonators for signal injection. The proposed CMOS ILFD
CMOS injection-locked frequency divider with two series-LC resonators
✍ Scribed by Sheng-Lyang Jang; Chih-Chieh Shih; Cheng-Chen Liu; Miin-Horng Juang
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 995 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
A fourth order resonator has been implemented to design an injection locked frequency divider (ILFD) implemented in a 0.18‐μm CMOS process. The ILFD is realized with a cross‐coupled nMOS LC‐tank oscillator with a direct injection MOSFET and two series‐LC resonators. At the supply voltage of 0.8 V, the low‐band free‐running tuning frequency is from 2.7 to 3.18 GHz. One excited high‐band frequency band is measured, and the free‐running tuning frequency is from 4.07 to 4.13 GHz. The divide‐by‐2 operational locking range is from 3.4 to 9.4 GHz, and the divide‐by‐4 operational locking range is from 10.5 (15.95) GHz to 13.6 (16.9) GHz for the low‐(high)‐frequency band. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:290–293, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25716
📜 SIMILAR VOLUMES
## Abstract This article presents a new divide‐by‐2 injection‐locked frequency divider (ILFD). The ILFD consists of a 2.1‐GHz top‐series quadrature voltage‐controlled oscillator (QVCO) and two NMOS switches, which are in parallel with the QVCO resonators for signal injection. The proposed CMOS ILFD
## Abstract This article presents a divide‐by‐3 CMOS injection locked frequency divider (ILFD) fabricated in a 0.18um CMOS process. The ILFD circuit is realized with a complementary Colpitts CMOS LC‐tank oscillator with an injection MOS connected between the voltage controlled oscillator (VCO) outp
## Abstract In this study, a multimodulus CMOS injection‐locked frequency divider (ILFD) fabricated in a 0.18‐μm CMOS process is designed and the operation principle of the ILFD is described, which was realized using a cross‐coupled PMOS LC‐tank oscillator as the load of a double‐balanced NMOS Gilb
## Abstract This article proposes a new CMOS LC‐tank injection locked frequency divider (ILFD) fabricated in a 0.18‐μm CMOS process and describes the operation principle of the ILFD. The ILFD circuit is realized with a double cross‐coupled CMOS LC‐tank oscillator with a symmetric MOS‐switched LC re
## Abstract This article presents a wide locking range injection locked frequency divider (ILFD) implemented using a standard 0.18‐μm CMOS process. The ILFD consists of a double‐cross‐coupled VCO and an injection MOS for coupling injection signal to the resonator. At the supply voltage of 1.8 V, th