๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Closed-Form Analytical Expression for the Conductive and Dissipative Parameters of the MOS-C Equivalent Circuit

โœ Scribed by Daliento, S.; Tari, O.; Lancellotti, L.


Book ID
114620663
Publisher
IEEE
Year
2011
Tongue
English
Weight
120 KB
Volume
58
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


A new approach for the extraction of an
โœ C. van Niekerk; P. Meyer ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 333 KB ๐Ÿ‘ 2 views

Figure 4 Characteristic impedance and dispersion characteristics for the dominant and first two higher-order modes of shielded dielectric-loaded edge-coupled CBCPW structure with a = 4 mm, h , = h , = 1 mm, E , ~ = 2.22, and other parameters as in Figure 3 choosing appropriate loading and structura