sion line by almost 2 β and 0.5α0.75 cmrns, respectively. Because the SiO layer has a significantly lower dielectric 2 constant than that of GaAs, its inclusion will result in a smaller capacitance per unit length of the CPS slow-wave electrodes. This results in an increase in the phase velocity of
β¦ LIBER β¦
Closed-Form Expressions for the Parameters of Finned and Ridged Waveguides
β Scribed by Hoefer, W.J.R.; Burton, M.N.
- Book ID
- 114658167
- Publisher
- IEEE
- Year
- 1982
- Tongue
- English
- Weight
- 518 KB
- Volume
- 30
- Category
- Article
- ISSN
- 0018-9480
No coin nor oath required. For personal study only.
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## Abstract In this paper, novel and accurate closedβform expressions are proposed which represent the perβunitβlength lineβcoupling parameters (mutual impedance and mutual admittance) of coupled onβchip microstrip interconnects on lossy silicon substrate. The frequencyβdependent mutual admittance