Clear Observation of the Two-Dimensional Electron Gas in an Inx Ga1−x As/In0.52 Al0.48 As Quantum Well
✍ Scribed by Kim, T. W. ;Jung, M. ;Lee, J. I. ;Kang, K. N. ;Yoo, K-H. ;Ihm, G. ;Lee, S. J. ;Park, H. L.
- Publisher
- John Wiley and Sons
- Year
- 1992
- Tongue
- English
- Weight
- 247 KB
- Volume
- 133
- Category
- Article
- ISSN
- 0031-8965
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We have investigated the influence of the quantum well (QW) thickness for the gate controlled Rashba spin orbit interaction (SOI) in InP/In 0.8 Ga 0.2 As/In 0.52 Al 0.48 As asymmetric QWs from the analysis of the weak antilocalization. We prepared two different samples with 5 and 10 nm In 0.8 Ga 0.2
Photocurrent spectra in an In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As multi-quantum wells structure containing 9.4 nm wide wells were measured at room temperature in electric fields. The exciton peaks of ground-state transitions shifted fairly in 167 kV cm -1 as the quantum confined Stark effect. Stark s