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ChemInform Abstract: Influence of Oxygen Partial Pressure and Oxygen Content on the Wettability in the Copper—Oxygen—Alumina System.

✍ Scribed by Matthias Diemer; Achim Neubrand; Kevin P. Trumble; Juergen Roedel


Publisher
John Wiley and Sons
Year
2010
Weight
32 KB
Volume
31
Category
Article
ISSN
0931-7597

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Influence of the Oxygen Partial Pressure
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Quantitative depth profiling and compositional analysis of oxygen in TiO x film deposited on K9 glass was carried out using the resonant elastic scattering 16 O(a, a) 16 O at 3.045 MeV. By means of the resonance yield, the oxygen concentration in TiO x films as well as the oxygen-to-metal stoichiome