Deposition of Thin Films of Gallium Sulfide from a Novel Liquid Single-Source Precursor, Ga(SOCNEt 2 ) 3 , by Aerosol-Assisted CVD. -The novel liquid gallium monothiocarbamato complex (III) is utilized as a single-source precursor for the deposition of face-centered cubic GaS films on glass substra
ChemInform Abstract: In—CuInS2 Nanocomposite Film Prepared by Pulsed Laser Deposition Using a Single Source Precursor.
✍ Scribed by Wolfgang Bensch; Enrique Quiroga-Gonzalez; Lorenz Kienle; Viola Duppel; Doh-Kwon Lee; Juergen Janek
- Publisher
- John Wiley and Sons
- Year
- 2011
- Weight
- 21 KB
- Volume
- 42
- Category
- Article
- ISSN
- 0931-7597
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✦ Synopsis
In-CuInS 2 Nanocomposite Film Prepared by Pulsed Laser Deposition Using a Single Source Precursor. -[C13H28N2]5Cu2.1In17.9S33•17H2O is synthesized from a mixture of CuS, In, S, 4,4'-trimethylenedipiperidine, H2O, and ethyleneglycol (autoclave, 190 °C, 5 d, >90% yield) and used as a precursor for the preparation of the title film by pulsed laser deposition. The film is characterized by powder XRD, Raman spectroscopy, TEM, and electrical measurements. It consists of nanocrystals of elemental In and chalcopyrite type CuInS2 with sizes of 36 and 17 nm, respectively. A detailed study of the electrical performance indicates that the nanoparticles are in Ohmic contact and the resistivity is mainly caused by the CuInS2 nanocrystals which are less conducting than the pure In metal. The film exhibits a photoconductive effect under irradiation with light of wavelengths between 515 and 850 nm. -(BENSCH*, W.;
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