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Chemical vapour-deposited silicon nitride

✍ Scribed by Koichi Niihara; Toshio Hirai

Publisher
Springer
Year
1976
Tongue
English
Weight
572 KB
Volume
11
Category
Article
ISSN
0022-2461

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Silicon nitride (SiNx) films of varying stoichiometry (x= 1.04, 1.39 and 1.63) were deposited on silicon substrates at 250 Β°C by plasma-enhanced chemical vapour deposition (PECVD). The N/Si ratios were determined by electron spectroscopy for chemical analysis (ESCA) and Rutherford backscattering (RB