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Chemical vapor deposition of epitaxial aluminum-substituted YIG for a bubble domain device

โœ Scribed by Yo Sakurai; Ataka, S.; Minagawa, S.; Ishida, F.


Book ID
117921728
Publisher
IEEE
Year
1972
Tongue
English
Weight
321 KB
Volume
8
Category
Article
ISSN
0018-9464

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A low temperature (Tdep โฉฝ800 ยฐC) chemica
โœ W.R. Burger; R. Reif ๐Ÿ“‚ Article ๐Ÿ“… 1988 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 316 KB

A system has been developed that permits the deposition of device quality epitaxial silicon films at low temperatures. Using this system, epitaxial layers" have been grown that have a minoritycarrier lifetime of about 0.5 ms; the highest vahw reported for any low temperature silicon epitaxial proces