Metallorganic Chemical Vapor Deposition of TaOxNy as a High-Dielectric-Constant Material for Next-Generation Devices.

Chemical vapour deposition of the oxides

Chemical vapour deposition of the oxides of titanium, zirconium and hafnium for use as high-k materials in microelectronic devices. A carbon-free precursor for the synthesis of hafnium dioxide

✍ Ryan C. Smith; Tiezhong Ma; Noel Hoilien; Lancy Y. Tsung; Malcolm J. Bevan; Luig 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 340 KB 👁 3 views

A brief survey of the precursors used for the chemical vapour deposition of the dioxides of titanium, zirconium and hafnium is presented. The review covers precursors used for the closely related process known as atomic layer chemical vapour deposition (ALCVD or ALD). Precursors delivered by standar