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Chemical Deposited Pd on GaAs

✍ Scribed by R.V. Ghita; M. Nedelcu; M.F. Lazarescu


Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
129 KB
Volume
37
Category
Article
ISSN
0232-1300

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## On the Mechanism of Chemical Polishing of GaAs Crystals In order to establish reproducible conditions for chemical lap polishing of GaAs with NaOCl solutions, containing also OH-and CO:--ions, the mechanism of dissolution was investigated using the rotating disk arrangement. I n solutions with