Charge carrier recombination and diffusion in InGaAs(P) epitaxial layers
β Scribed by Juodkazis, S. ;Petrauskas, M. ;Quacha, A. ;Willander, M.
- Book ID
- 105383922
- Publisher
- John Wiley and Sons
- Year
- 1993
- Tongue
- English
- Weight
- 283 KB
- Volume
- 140
- Category
- Article
- ISSN
- 0031-8965
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π SIMILAR VOLUMES
Be diffusion during post-growth annealing has been investigated from InGaAs epitaxial layers grown between InGaAs undoped layers. A General Substitutional-Interstitial Diffusion mechanism is proposed to explain the observed concentration profiles and related Be diffusion. The concentration dependen
The paper provides an extension to the one-dimensional TLM diffusion model. The extended diffusion node presented here models the exact transport equation with diffusion drift and recombination of charge carriers in semiconductors. A general algorithm for providing a numerical solution to the transp