๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

TLM modelling of diffusion, drift and recombination of charge carriers in semiconductors

โœ Scribed by M. Y. Al-Zeben; A. H. M. Saleh; M. A. Al-Omar

Publisher
John Wiley and Sons
Year
1992
Tongue
English
Weight
442 KB
Volume
5
Category
Article
ISSN
0894-3370

No coin nor oath required. For personal study only.

โœฆ Synopsis

The paper provides an extension to the one-dimensional TLM diffusion model. The extended diffusion node presented here models the exact transport equation with diffusion drift and recombination of charge carriers in semiconductors. A general algorithm for providing a numerical solution to the transport phenomena is also presented here. The analytical solution for infinitely long semiconductors is compared with the TLM numerical results.

๐Ÿ“œ SIMILAR VOLUMES

Non-unique solutions in drift diffusion
Non-unique solutions in drift diffusion modelling of phototransistors
โœ S. J. Woods; S. P. Wilson; Alison B. Walker ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 243 KB ๐Ÿ‘ 1 views

We report non-unique solutions for the potential in a Drift Di!usion (DD) model of a two terminal phototransistor. These solutions are present under bias without illumination, and persist until high illumination levels. It is well known that the DD equations can yield non-unique solutions for pn str

Automatic timestepping in TLM routines f
Automatic timestepping in TLM routines for the modelling of thermal diffusion processes
โœ S. H. Pulko; A. Mallik; R. Allen; P. B. Johns ๐Ÿ“‚ Article ๐Ÿ“… 1990 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 470 KB

U . I(. ## 1. Introduction The application of the transmission line matrix method (TLM) to electromagnetic problems is well established. 1-5 More recently TLM has been applied to problems in diffusion.6 TLM has been applied successfully to thermal diffusion in one, and three dimensions.8 Results h