Characterization of crystallographic pro
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Barabash, R. I. ;Barabash, O. M. ;Ice, G. E. ;Roder, C. ;Figge, S. ;Einfeldt, S.
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Article
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2006
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John Wiley and Sons
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English
β 735 KB
## Abstract Intrinsic stresses due to lattice mismatch, high densities of threading dislocations, and extrinsic stresses resulting from the mismatch in the coefficients of thermal expansion, are present in almost all IIIβNitride heterostructures. Stress relaxation in the GaN layers occurs in conven