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Characterization of Thermoelectric Properties of Heavily Doped n-Type Polycrystalline Silicon Carbide Thin Films

✍ Scribed by Lei, Man I; Mehregany, Mehran


Book ID
121279601
Publisher
IEEE
Year
2013
Tongue
English
Weight
544 KB
Volume
60
Category
Article
ISSN
0018-9383

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Characterization of nitrogen-doped amorp
✍ J Ε afrΓ‘nkovΓ‘a; J Hurana; I HotovΓ½b; AP Kobzevc; SA Korenevc πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 202 KB

The properties of nitrogen-doped amorphous SiC films irradiated by pulse electron beams are presented with the I-V characteristics of diodes made of irradiated SiC films grown on silicon substrates. The results showed that the film conductivity increased by about two orders of magnitude as the nitro