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Characterization of silicon-implanted SiO2 layers using positron annihilation spectroscopy

✍ Scribed by G Ghislotti; B Nielsen; P Asoka-Kumar; K.G Lynn; C Szeles; C.E Bottani; S Bertoni; G.F Cerofolini; L Meda

Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 484 KB
Volume: 276
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(95)08105-4

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