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Characterization of Si nanocrystals grown by annealing SiO[sub 2] films with uniform concentrations of implanted Si

✍ Scribed by Guha, S.; Qadri, S. B.; Musket, R. G.; Wall, M. A.; Shimizu-Iwayama, Tsutomu

Book ID: 121689883
Publisher: American Institute of Physics
Year: 2000
Tongue: English
Weight: 330 KB
Volume: 88
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1308096

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