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Characterization of Recessed-Gate AlGaN/GaN HEMTs as a Function of Etch Depth

✍ Scribed by T.J. Anderson; M.J. Tadjer; M.A. Mastro; J.K. Hite; K.D. Hobart; C.R. Eddy; F.J. Kub

No coin nor oath required. For personal study only.

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