Characterization of oxygen deficient gallium oxide films grown by PLD
✍ Scribed by Petitmangin, A.; Gallas, B.; Hebert, C.; Perrière, J.; Binet, L.; Barboux, P.; Portier, X.
- Book ID
- 123023371
- Publisher
- Elsevier Science
- Year
- 2013
- Tongue
- English
- Weight
- 525 KB
- Volume
- 278
- Category
- Article
- ISSN
- 0169-4332
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## Abstract Undoped and Neodymium‐doped gallium oxide (Ga~2~O~3~) thin films of about 500 nm thickness were successfully grown at different temperatures ranging from 100 up to 600 °C by radiofrequency magnetron sputtering. Post‐annealing treatments were carried out at 900 °C and 1000 °C. The obtain