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Characterization of Microdefects in Silicon by Means of X-Ray Reflection Curves

✍ Scribed by V. Holý; J. Kubéna

Publisher
John Wiley and Sons
Year
1989
Tongue
English
Weight
518 KB
Volume
155
Category
Article
ISSN
0370-1972

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## Abstract The quantitative characterization of complex microdefect structures in silicon crystals grown by Czochralski method and irradiated with various doses of high‐energy electrons (18 MeV) has been performed by methods of the high‐resolution X‐ray diffraction. The concentrations and average