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Characterization of iron nitrides prepared by spark erosion, plasma nitriding, and plasma immersion ion implantation

✍ Scribed by Y. Jirásková; S. Havlíček; O. Schneeweiss; V. Peřina; C. Blawert

Book ID
114224838
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
295 KB
Volume
234
Category
Article
ISSN
0304-8853

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## Abstract Copper nitride film prepared by plasma‐immersion ion implantation (PIII) is demonstrated to exhibit reversible resistance variance character. By forming a gradually distributed nitrogen concentration in the Cu‐nitride film, the nitride‐based memory devices show bipolar nature with a low