Characterization of InGaN/GaN epitaxial layers by aberration corrected TEM/STEM
โ Scribed by Houari Amari; Ian M. Ross; Tao Wang; Thomas Walther
- Book ID
- 112182340
- Publisher
- John Wiley and Sons
- Year
- 2012
- Tongue
- English
- Weight
- 846 KB
- Volume
- 9
- Category
- Article
- ISSN
- 1862-6351
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๐ SIMILAR VOLUMES
InGaN/GaN multiple quantum-wells (MQWs) on Ga-polarity GaN by plasma-assisted molecularbeam epitaxy were grown and characterized. In-situ reflection high-energy-electron diffraction observations and high-resolution X-ray diffraction results indicated that a flat interface and a good periodicity of t
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