๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Characterization of InGaN/GaN epitaxial layers by aberration corrected TEM/STEM

โœ Scribed by Houari Amari; Ian M. Ross; Tao Wang; Thomas Walther


Book ID
112182340
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
846 KB
Volume
9
Category
Article
ISSN
1862-6351

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Growth and Characterization of InGaN/GaN
โœ X.Q. Shen; T. Ide; M. Shimizu; F. Sasaki; H. Okumura ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 101 KB ๐Ÿ‘ 2 views

InGaN/GaN multiple quantum-wells (MQWs) on Ga-polarity GaN by plasma-assisted molecularbeam epitaxy were grown and characterized. In-situ reflection high-energy-electron diffraction observations and high-resolution X-ray diffraction results indicated that a flat interface and a good periodicity of t

Characterization of GaN/InGaN multiple q
โœ W.K. Fong; K.K. Leung; Charles Surya ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 455 KB

High-quality GaN/InGaN multiple quantum wells (MQWs) were fabricated on nano-scale epitaxial lateral overgrown (NELO) GaN layers. To grow the NELO layer first a 200 nm-thick SiO 2 was deposited on a 2 mmthick undoped GaN layer. A 10 nm-thick Ni layer was then deposited on the SiO 2 film followed by