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Characterization of InGaAs/InP single quantum well structure on GaAs substrate with metamorphic buffer grown by molecular beam epitaxy

✍ Scribed by K. Radhakrishnan; K. Yuan; Wang Hong

Book ID: 108165616
Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 227 KB
Volume: 261
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2003.09.014

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