𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Characterization of InGaAs quantum dot lasers with a single quantum dot layer as an active region

✍ Scribed by Richard P Mirin; Arthur C Gossard; John E Bowers

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
105 KB
Volume
2
Category
Article
ISSN
1386-9477

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Probing by transport the single-particle
Probing by transport the single-particle energy spectrum up to high energy of one quantum dot with the ground state of an adjacent weakly coupled quantum dot
✍ Austing, D. G. ;Yu, G. ;Payette, C. ;Gupta, J. A. ;Korkusinski, M. ;Aers, G. C. πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 331 KB

## Abstract We investigate single‐electron resonant tunneling through gated vertical quantum dot molecules for which the tunnel coupling between the two dots is weak to examine magnetic field induced two‐ and three‐level crossings in the single‐particle energy spectrum of the constituent dots. We c

Fabrication of a few-electron In0.56Ga0.
Fabrication of a few-electron In0.56Ga0.44As vertical quantum dot with an Al2O3 gate insulator
✍ T. Kita; D. Chiba; Y. Ohno; H. Ohno πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 429 KB

For the study of spin-dependent transport in narrow-gap semiconductor nanostructures, we fabricated a few-electron quantum dot based on an In 0.56 Ga 0.44 As resonant tunneling diode structure with an Al 2 O 3 gate insulator formed by atomic layer deposition and an air-bridge drain electrode. This g

Effects of an Electric Field on the Bind
Effects of an Electric Field on the Binding Energy of a Donor Impurity in a Spherical GaAs–(Ga,Al)As Quantum Dot with Parabolic Confinement
✍ G. Murillo; N. Porras-Montenegro πŸ“‚ Article πŸ“… 2000 πŸ› John Wiley and Sons 🌐 English βš– 79 KB πŸ‘ 2 views

The binding energy of a donor impurity in a spherical GaAsΒ±(Ga,Al)As quantum dot with parabolic confinement is calculated as a function of the radius of the quantum dot and as a function of the intensity of an applied electric field. Calculations are performed within the effective-mass approximation