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Characterization of HVPE GaN layers by atomic force microscopy and Raman spectroscopy

✍ Scribed by Fornari, R; Bosi, M; Bersani, D; Attolini, G; Lottici, P P; Pelosi, C

Book ID
121086100
Publisher
Institute of Physics
Year
2001
Tongue
English
Weight
364 KB
Volume
16
Category
Article
ISSN
0268-1242

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## Abstract The crystallographic structures of the various Metalorganic Vapour Phase Epitaxy (MOVPE) thin GaN epitaxial layers deposited on (00.1) sapphire substrates are described and compared with the structural properties of the thick gallium nitride layers deposited by Hydride Vapour Phase Epit