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Homoepitaxial GaN Layers Studied by Low-Energy Electron Microscopy, Atomic Force Microscopy and Transmission Electron Microscopy

✍ Scribed by Pavlovska, A. ;Torres, V. M. ;Edwards, J. L. ;Bauer, E. ;Smith, David J. ;Doak, R. B. ;Tsong, I. S. T. ;Thomson, D. B. ;Davis, R. F.

Publisher: John Wiley and Sons
Year: 1999
Tongue: English
Weight: 340 KB
Volume: 176
Category: Article
ISSN: 0031-8965
DOI: 10.1002/(sici)1521-396x(199911)176:1<469::aid-pssa469>3.0.co;2-v

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