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Characterization of H2N2 plasma passivation process for poly-Si thin film transistors (TFTs)

✍ Scribed by M.-J Tsai; F.-S Wang; K.-L Cheng; S.-Y Wang; M.-S Feng; H.-C Cheng

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 585 KB
Volume: 38
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(94)00241-7

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