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Characterization of epitaxial silicon layers made by reduced pressure/temperature CVD

✍ Scribed by J.L. Regolini; D. Bensahel; E. Scheid; A. Perio; J. Mercier

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
519 KB
Volume
36
Category
Article
ISSN
0169-4332

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πŸ“œ SIMILAR VOLUMES

Epitaxial silicon growth on porous silic
Epitaxial silicon growth on porous silicon by reduced pressure, low temperature chemical vapour deposition
✍ C. Oules; A. Halimaoui; J.L. Regolini; R. Herino; A. Perio; D. Bensahel; G. Bomc πŸ“‚ Article πŸ“… 1989 πŸ› Elsevier Science 🌐 English βš– 605 KB

Epitaxial growth of silicon on porous silicon layers has been obtained at a low temperature (820 Β°C) in a reduced pressure vapour phase epitaxy reactor, using Sill 4 as the reactive gas and a lampheating .Zvstem allowing rapid thermal processing. Silicon epitaxv has been studied on different porous