Characterization of Crystal Growth Defects by X-Ray Methods

✍ Scribed by Eugene S. Meieran (auth.), Dr. Brian K. Tanner, Dr. D. Keith Bowen (eds.)

• Publisher: Springer US
• Year: 1980
• Tongue: English
• Leaves: 614
• Series: Nato Advanced Study Institutes Series 63
• Edition: 1
• Category: Library

✦ Synopsis

This book contains the proceedings of a NATO Advanced Study Institute entitled "Characterization of Crystal Growth Defects by X-ray Methods' held in the University of Durham, England from 29th August to 10th September 1979. The current interest in electronic materials, in particular silicon, gallium aluminium arsenide, and quartz, and the recent availability of synchrotron radiation for X-ray diffraction studies made this Advanced Study Institute particularly timely. Two main themes ran through the course: 1. A survey of the various types of defect occurring in crystal growth, the mechanism of their different methods of generation and their influence on the properties of relativelY perfect crystals. 2. A detailed and advanced course on the observation and characterization of such defects by X-ray methods. The main emphasis was on X-ray topographic techniques but a substantial amount of time was spent on goniometric techniques such as double crystal diffractometry and gamma ray diffraction. The presentation of material in this book reflects these twin themes. Section A is concerned with defects, Section C with techniques and in linking them. Section B provides a concise account of the basic theory necessary for the interpretation of X-ray topographs and diffractometric data. Although the sequence follows roughly the order of presentation at the Advanced Study Institute certain major changes have been made in order to improve the pedagogy. In particular, the first two chapters provide a vital, and seldom articulated, case for the need for characterization for crystals used in device technologies.

✦ Table of Contents

Front Matter....Pages i-xxvi
Industrial Implications of Crystal Quality....Pages 1-27
The Technical Importance of Growth Defects....Pages 28-45
Defects and Their Detectability in Melt-Grown Crystals....Pages 46-72
Defects and Their Detectability....Pages 73-96
Defect Generation in Metal Crystals....Pages 97-132
Defects in Non-Metal Crystals....Pages 133-160
Defect Visualisation: Individual Defects....Pages 161-185
Experimental Techniques for the Study of Statistically Distributed Defects....Pages 186-215
Elementary Dynamical Theory....Pages 216-263
Perfect and Imperfect Crystals....Pages 264-297
X-ray Sources....Pages 298-319
X-ray Detectors....Pages 320-332
Sample Preparation....Pages 333-348
Laboratory Techniques for X-ray Reflection Topography....Pages 349-367
Laboratory Techniques for Transmission X-Ray Topography....Pages 368-400
White Beam Synchrotron Radiation Topography....Pages 401-420
Control of Wavelength, Polarization, Time-Structure and Divergence for Synchrotron Radiation Topography....Pages 421-432
Monochromatic Synchrotron Radiation Topography....Pages 433-455
Environmental Stages and Dynamic Experiments....Pages 456-473
Technology and Costs of X-ray Diffraction Topography....Pages 474-496
X-ray TV Imaging and Real-Time Experiments....Pages 497-502
Computer Modelling of Crystal Growth and Dissolution....Pages 503-505
Microradiography and Absorption Microscopy....Pages 506-511
Reciprocal Lattice Spike Topography....Pages 512-514
Reflection Topography: Panel Discussion....Pages 515-519
Back Matter....Pages 520-589

✦ Subjects

Physics, general