Indium phosphide. Crystal growth and characterization

✍ Scribed by R.K. Willardson and Albert C. Beer (Eds.)

Publisher: AP
Year: 1990
Tongue: English
Leaves: 395
Series: Semiconductors and Semimetals 31
Category: Library

No coin nor oath required. For personal study only.

✦ Synopsis

Summarizes advances made in direct synthesis, large crystal growth with low dislocation densities, and epitaxial layer growth. The book provides descriptions of substrate preparation and evaluation, and treats methods for the reduction of dislocations and the measurement of stochiometric defects.

✦ Table of Contents

Content:
Edited By
Page iii

Copyright Page
Page iv

List of Contributors
Pages ix-x

Preface
Pages xi-xii
R.K. Willardson, Albert C. Beer

Chapter 1 Growth of Dislocation-free InP Original Research Article
Pages 1-35
J.P. Farges

Chapter 2 High Purity InP Grown by Hydride Vapor Phase Epitaxy Original Research Article
Pages 37-69
M.J. Mccollum, G.E. Stillman

Chapter 3 Direct Synthesis and Growth of Indium Phosphide by the Liquid Phosphorus Encapsulated Czochralski Method Original Research Article
Pages 71-92
Tomoki Inada, Tsuguo Fukuda

Chapter 4 InP Crystal Growth, Substrate Preparation and Evaluation Original Research Article
Pages 93-174
O. Oda, K. Katagiri, K. Shinohara, S. Katsura, Y. Takahashi, K. Kainosho, K. Kohiro, R. Hirano

Chapter 5 InP Substrates: Production and Quality Control Original Research Article
Pages 175-241
Koji Tada, Masami Tatsumi, Mikio Morioka, Takashi Araki, Tomohiro Kawase

Chapter 6 LP-MOCVD Growth, Characterization, and Application of InP Material Original Research Article
Pages 243-355
Manijeh Razeghi

Chapter 7 Stoichiometric Defects in InP Original Research Article
Pages 357-389
T.A. Kennedy, P.J. Lin-Chung

Index
Pages 391-394

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