Summarizes advances made in direct synthesis, large crystal growth with low dislocation densities, and epitaxial layer growth. The book provides descriptions of substrate preparation and evaluation, and treats methods for the reduction of dislocations and the measurement of stochiometric defects.
Synthesis, Crystal Growth and Characterization
β Scribed by K. Lal (Eds.)
- Year
- 1982
- Tongue
- English
- Leaves
- 565
- Category
- Library
No coin nor oath required. For personal study only.
β¦ Table of Contents
Content:
FRONT MATTER, Page i
Copyright, Page ii
DR. AJIT RAM VERMA, Pages iii-iv
SPONSORING ORGANISATIONS, Pages v-vi
FOREWORD, Pages ix-x, Emmanuel Kaldis
PREFACE, Pages xi-xii, Krishan Lal
CRYSTAL GROWTH AND LATTICE IMPERFECTIONSβINTERFEROMETRIC AND X-RAY DIFFRACTION STUDIES: REMINISCENCES, Pages 1-56, AJIT RAM VERMA
HIGH-TEMPERATURE CRYSTAL GROWTH AND THERMODYNAMIC CHARACTERIZATION OF MATERIALS WITH VALENCE INSTABILITIES, Pages 57-85, E. KALDIS, B. FRITZLER, H. SPYCHIGER, B. STEINMANN
MICROCRYSTALLINE AND AMORPHOUS SILICON PREPARED BY LOW PRESSURE PLASMA CVD, Pages 87-92, Z. IQBAL
CRYSTALLIZATION OF ELECTRONIC MATERIALS UNDER VERY HIGH GAS PRESSURES, Pages 93-117, SΕAWOMIR MAJOROWSKI
FUNDAMENTAL ASPECTS OF CRYSTAL GROWTH AND EPITAXY (in-situ STUDIES), Pages 119-134, R. KERN
FUNDAMENTAL ASPECTS AND TECHNIQUES OF CRYSTAL GROWTH FROM THE MELT, Pages 135-183, CARLO PAORICI
HIGH-TEMPERATURE NON-METALLIC CRYSTALLINE MATERIALS, Pages 185-195, V.V. OSIKO
CRYSTAL GROWTH AND EPITAXY FROM HIGH-TEMPERATURE SOLUTIONS, Pages 197-211, W. TOLKSDORF
CHARACTERISATION OF CRYSTAL PERFECTION BY DIFFRACTION METHODS, Pages 213-214, NORIO KATO
AN INTRODUCTION TO THE EXPERIMENTAL TECHNIQUES USED IN X-RAY DIFFRACTION TOPOGRAPHY, Pages 215-241, KRISHAN LAL
X-RAY DIFFRACTION MEASUREMENT OF STRAINS AND STRESSES IN THIN FILMS, Pages 243-259, ARMIN SEGMΓLLER
X-RAY DIFFRACTION STUDY OF PERIODIC AND RANDOM FAULTING IN CLOSE-PACKED STRUCTURES, Pages 261-285, DHANANJAI PANDEY, P. KRISHNA
CHARACTERIZATION OF POINT DEFECT AGGREGATES IN NEARLY PERFECT CRYSTALS BY DIFFUSE X-RAY SCATTERING MEASUREMENTS, Pages 287-315, KRISHAN LAL
ELECTRON SPECTROSCOPIC STUDIES OF SOLID SURFACES, Pages 317-338, C.N.R. RAO
DEFECT CHARACTERIZATION USING TRANSMISSION AND SCANNING ELECTRON MICROSCOPY, Pages 339-371, J. HEYDENREICH
THE STRUCTURE OF GRAIN BOUNDARIES, Pages 373-388, S. RANGANATHAN
STRUCTURE OF TIN OXIDE FILMS, Pages 389-397, S.K. PENEVA, D.D. NIHTIANOVA, R.K. RUDARSKA, K.D. DJUNEVA, I.Z. KOSTADINOV
CHARACTERISATION OF MATERIALS BY NEUTRON SCATTERING, Pages 399-412, R. CHIDAMBARAM, A. SEQUEIRA
CHARACTERISATION OF SEMICONDUCTORS BY ELECTRON TRANSPORT EXPERIMENTS, Pages 413-426, B.R. NAG
STRUCTURAL CHANGES IN CRYSTALS AT POWER DENSITIES NEAR THE ELECTRIC BREAKDOWN, Pages 427-438, PETER THOMA, KRISHAN LAL
PHYSICS IN MICROELECTRONICS AND MICROELECTRONICS IN PHYSICS, Pages 439-467, E. MOOSER
SOLAR CELLS, Pages 469-484, JOHN B. GOODENOUGH
SOLAR GENERATORS WITH CRYSTALLINE SILICON SOLAR CELLS, Pages 485-496, KURT ROY
IONIC CONDUCTORS: THE STRUCTURAL APPROACH, Pages 497-518, HEINZ SCHULZ
FAST ION TRANSPORT IN SOLIDS, Pages 519-553, JOHN B. GOODENOUGH
MODERN PHYSICS AND SYΔDVΔDA, Pages 555-568, D.S. KOTHARI
π SIMILAR VOLUMES
Summarizes advances made in direct synthesis, large crystal growth with low dislocation densities, and epitaxial layer growth. The book provides descriptions of substrate preparation and evaluation, and treats methods for the reduction of dislocations and the measurement of stochiometric defects.
This new textbook provides for the first time a comprehensive treatment of the basics of contemporary crystallography and crystal growth in a single volume. The reader will be familiarized with the concepts for the description of morphological and structural symmetry of crystals. The architecture of
"The first comprehensive book on fine particle synthesis that ranges from fundamental principles to the most advanced concepts, highlighting mondispersed particles from nanometers to micrometers. Describes mechanisms of formation and specific characteristics of each family of compounds while identif