## Abstract Hot filament chemically vapor deposited (HFCVD) boron doped diamond films were grown on monocrystalline silicon (111) doped with B/C ratios of 4000, 8000 and 12,000 ppm. Scanning electron micrographs show that the films are composed of well‐faceted microcrystallites ranging in size from
✦ LIBER ✦
Characterization of boron doped CVD diamond films by Raman spectroscopy and X-ray diffractometry
✍ Scribed by Gonçalves, J.A.N; Sandonato, G.M; Iha, K
- Book ID
- 121390555
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 499 KB
- Volume
- 11
- Category
- Article
- ISSN
- 0925-9635
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X-ray diffraction analysis and micro-Raman spectroscopy measurements have been used for stress studies on HFCVD 18 21 diamond films with different levels of boron doping. The boron incorporation in the film varied in the range 10 -10 3 boron / cm . The grain size, obtained from SEM images, showed gr