Characterization of band gap in GaAsSb/GaAs heterojunction and band alignment in GaAsSb/GaAs multiple quantum wells
β Scribed by T.S. Wang; J.T. Tsai; K.I. Lin; J.S. Hwang; H.H. Lin; L.C. Chou
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 300 KB
- Volume
- 147
- Category
- Article
- ISSN
- 0921-5107
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
By selective doping (Be) of the well and barrier regions of GaAs/Al 0.3 Ga 0.7 As structures we have realized the situation where the upper Hubbard band (A ΓΎ centers) has been occupied by holes in the equilibrium. We studied the temperature behavior of the Hall effect, variable range hopping (VRH) c
We determine the energy band offsets in GaAs/AlxGal\_xAs and GaSb/AlxGal\_xSb quantum wells with a new light-scattering method. We measure electronic intersubband transitions in the conduction band of the quantum wells, and use this information to deduce the conduction band discontinuity AEe. The li