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Characterization of annealing effect on the surface, interface and bulk of AlN grown on SiC

โœ Scribed by P.X. Feng; Joel De Jesus; G. Morell; Oscar Resto; Luis F. Fonseca; Brad Weiner


Book ID
113656229
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
511 KB
Volume
24
Category
Article
ISSN
0263-4368

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## Abstract AlN doped SiC films were deposited on onโ€axis Siโ€face 4Hโ€SiC (0001) substrates by the physical vapor transport (PVT) method. Thick film in the range of 20 ฮผm range was grown and morphology was characterized. Films were grown by physical vapor deposition (PVD) in a vertical geometry in t