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Characterization of ana-Si:H/c-Si interface by admittance spectroscopy

✍ Scribed by A. S. Gudovskikh; J. -P. Kleider; E. I. Terukov

Book ID
110143657
Publisher
Springer
Year
2005
Tongue
English
Weight
93 KB
Volume
39
Category
Article
ISSN
1063-7826

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The a-Si N, ,:Hic-Si interface density of states is studied by the photocapacitance transient spectroscopy (PCTS) technique. After illumination with 4.13 eV photons, the PCTS reveals an interface defect creation while the midgap voltage shift indicates a hole injection from c-Si and subsequent hole