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Characterization of a 3C-SiC Single Domain Grown on 6H-SiC(0001) by a Vapor−Liquid−Solid Mechanism

✍ Scribed by Soueidan, Maher; Ferro, Gabriel; Nsouli, Bilal; Roumie, Mohamad; Polychroniadis, Efstathios; Kazan, Michel; Juillaguet, Sandrine; Chaussende, Didier; Habka, Nada; Stoemenos, John; Camassel, Jean; Monteil, Yves

Book ID
120568837
Publisher
American Chemical Society
Year
2006
Tongue
English
Weight
311 KB
Volume
6
Category
Article
ISSN
1528-7483

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A Vapor–Liquid–Solid Mechanism for Growi
A Vapor–Liquid–Solid Mechanism for Growing 3C-SiC Single-Domain Layers on 6H-SiC(0001)
✍ M. Soueidan; G. Ferro 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 410 KB

## Abstract Growing device‐quality 3C‐SiC monocrystalline material is still an issue despite two decades of work dedicated to the subject. Using silicon as the substrate generates too many defects in the layers, owing to lattice mismatch, while it is very difficult to control the initial nucleation