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Effect of nitrogen impurity on the stabilization of 3C–SiC polytype during heteroepitaxial growth by vapor–liquid–solid mechanism on 6H–SiC substrates

✍ Scribed by Lorenzzi, Jean; Souliere, Veronique; Carole, Davy; Jegenyes, Nikoletta; Kim-Hak, Olivier; Cauwet, François; Ferro, Gabriel

Book ID
123194694
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
884 KB
Volume
20
Category
Article
ISSN
0925-9635

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Effect of growth parameters on the heter
Effect of growth parameters on the heteroepitaxy of 3C-SiC on 6H-SiC substrate by chemical vapor deposition
✍ M. Soueidan; G. Ferro; B. Nsouli; F. Cauwet; J. Dazord; G. Younes; Y. Monteil 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 994 KB

Epitaxial 3C-SiC(1 1 1) films were grown on 6H-SiC(0 0 0 1) Si face on axis substrates by chemical vapor deposition under H 2 , SiH 4 and C 3 H 8 in a cold wall vertical reactor. Two temperatures were studied (1450 and 1700 • C) with various C/Si ratio and deposition time. It was found that under co