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Characterization and TCAD modelling of termination structures for silicon radiation detectors

✍ Scribed by S. Dittongo; M. Boscardin; L. Bosisio; M. Ciacchi; G.-F. Dalla Betta; P. Gregori; C. Piemonte; I. Rachevskaia; S. Ronchin; N. Zorzi

Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 211 KB
Volume: 518
Category: Article
ISSN: 0168-9002
DOI: 10.1016/j.nima.2003.11.023

No coin nor oath required. For personal study only.

✦ Synopsis

We have recently proposed a novel junction termination structure for silicon radiation detectors, featuring all-p-type multiguard and scribe-line implants, with metal field-plates completely covering the gap between the implanted rings. The structure is intended for detector long-term stability enhancement even in adverse ambient conditions and for fabrication-process simplification. A thorough static characterization, including stability measurements in varying humidity conditions, has been carried out on a variety of samples fabricated at ITC-irst. Comparisons with diodes featuring an n-type implant along the border-or no edge structure at all-have been performed. The new structures show stable behaviour at relatively high bias ðB200 VÞ; also in the presence of wide humidity changes (1-90%). A good qualitative agreement has been obtained between experimental results and simulation predictions, allowing to gain deep insight into the physical behaviour of the device.

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