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Radiation tolerance of epitaxial silicon carbide detectors for electrons and γ-rays

✍ Scribed by F Nava; E Vittone; P Vanni; P.G Fuochi; C Lanzieri


Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
213 KB
Volume
514
Category
Article
ISSN
0168-9002

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The performance of n-and p-type silicon detectors manufactured by a recently developed planar technology for the detection of B-particles, conversion electrons and y-rays is reported. Two structures are tested: an ion implanted detector with p+-n-n+ structure and a diffusion detector with n+-p-p+ st