Diffusion characteristics of gold in silicon and electrical properties of silicon diodes used for developing radiation-hard detectors

✍ Scribed by M. Msimanga; M. McPherson

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 318 KB
• Volume: 127
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/j.mseb.2005.09.060

✦ Synopsis

Low-resistivity n-type silicon has been doped with gold and characterised using Rutherford backscattering spectrometry and Hall effect measurements. Schottky barrier diodes were fabricated on silicon with no gold and on gold-doped silicon and then characterised using current-voltage and capacitance-voltage measurements. Results from the material characterisation experiments show that the diffusion profile of gold in thin silicon substrates is U-shaped and that gold-doped silicon has a higher resistivity. Results from the device characterisation experiments indicate a deviation from "normal" diode behaviour to ohmic behaviour. The diode characteristics become typical of devices made of high resistivity material with relaxation-like properties, a material that is suitable for radiation-hard detector fabrication.