Characteristics of Ti-doped ITO films grown by DC magnetron sputtering

✍ Scribed by Sung Mook Chung; Jae Heon Shin; Woo-Seok Cheong; Chi-Sun Hwang; Kyoung Ik Cho; Young Jin Kim

• Book ID: 113529029
• Publisher: Elsevier Science
• Year: 2012
• Tongue: English
• Weight: 612 KB
• Volume: 38
• Category: Article
• ISSN: 0272-8842
• DOI: 10.1016/j.ceramint.2011.05.110

✦ Synopsis

We have investigated the effects of Ti doping on the structural, optical, and electrical properties of indium tin oxide (ITO) thin films prepared by direct-current (DC) sputtering at room temperature. It is observed that the Ti doping changes the microstructure of the ITO films from amorphous to polycrystalline improving the electrical properties. The optimized ITO:Ti thin film after annealing shows a carrier concentration of 6.24 Â 10 20 cm À3 , a mobility of 34 cm 2 /V s, and a resistivity of 2.3 Â 10 À4 V cm. The ITO:Ti film also shows a better thermal stability up to 450 8C.