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Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE)

✍ Scribed by Kim, T.W.; Garrod, T.J.; Mawst, L.J.; Kuech, T.F.; LaLumondiere, S.D.; Sin, Y.; Lotshaw, W.T.; Moss, S.C.

Book ID: 125456849
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 472 KB
Volume: 370
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2012.06.043

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