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Interface characteristics of GaInP/GaAs double heterostructures grown by metalorganic vapor phase epitaxy

✍ Scribed by C.Y. Tsai; M. Moser; C. Geng; V. Härle; T. Forner; P. Michler; A. Hangleiter; F. Scholz

No coin nor oath required. For personal study only.

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