Characteristics of AlN crystal growth depending on m- and a-axis oriented off-angle of c-sapphire substrate
β Scribed by Noritoshi Maeda; Hideki Hirayama; Sachie Fugikawa
- Book ID
- 112182300
- Publisher
- John Wiley and Sons
- Year
- 2012
- Tongue
- English
- Weight
- 342 KB
- Volume
- 9
- Category
- Article
- ISSN
- 1862-6351
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
YBa,Cu,O,\_x superconducting thin films with a-axis perpendicular to the substrate were grown on both LaSrGaO, (100) and SrTiO, (100) single crystals by off-axis rf sputtering and their properties were compared. The film grown at 740 "C on a self-template layer grown in situ at 650 "C on LaSrGaO, (1
## Abstract High quality zincblende ZnTe epitaxial layers have been grown on a tilted GaAs (100) substrate by hotβwall epitaxy. The surface morphology and the crystallinity were investigated in terms of their growth temperature dependence while the optical properties were analyzed by photoluminesce