𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Characteristic properties of III–VA/III-VB heterointerfaces grown by molecular beam epitaxy

✍ Scribed by M. Yano; M. Ashida; Y. Iwai; M. Inoue


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
519 KB
Volume
41-42
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Point defects in III–V materials grown b
✍ P. Hautojärvi; J. Mäkinen; S. Palko; K. Saarinen; C. Corbel; L. Liszkay 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 676 KB

The present understanding of the point defects in GaAs and InP grown by molecular beam epitaxy at low temperature (LT) is briefly reviewed. New results on vacancies and ion-type acceptors obtained by positron annihilation are given. Depending on the growth temperature, Ga vacancies or small vacancy