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Characteristic defects generated at the Si/SiO2 interface during avalanche injection of holes

✍ Scribed by A.S. Vengurlekar; V. Lakshmanna; K.V. Ramanathan


Publisher
Elsevier Science
Year
1985
Weight
343 KB
Volume
22-23
Category
Article
ISSN
0378-5963

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Segregation of Ca in Si has been studied using SIMS and RBS. Pronounced Ca profile broadening is observed during SIMS measurements with oxygen ions under bombardment conditions, yielding the formation of a stoichiometric oxide layer at the surface. Additional profiling through the SiO 2 /Si interfac