Thermodynamic and kinetic stability with respect to hole trapping. of silanic bonds at the Si–SiO2interface

Thermodynamic approach to the redistribu

Thermodynamic approach to the redistribution of boron and fluorine implanted at the interface of an SiO2/Si system

✍ F. Réti; Z. Sassi; L. Kaabi; J.-C. Bureau; H. Vincent; B. Balland 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 79 KB 👁 2 views

In microelectronics, during fabrication of ultrashallow p-n junctions boron is implanted in a silicon monocrystal. However, the subsequent rapid thermal annealing (RTA) causes anomalous fast diffusion (transient enhanced diffusion, TED) of the boron inwards in the crystal, hindering the formation of