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Characterising gate dielectrics in high mobility devices using novel nanoscale techniques

โœ Scribed by R. Kapoor; E. Escobedo-Cousin; S.H. Olsen; S.J. Bull


Book ID
104056454
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
851 KB
Volume
50
Category
Article
ISSN
0026-2714

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There has been a search for alternative dielectrics with significantly increased dielectric constants, K, which increases physical thickness in proportion to K, and therefore would significantly reduce direct tunneling. However, increases in K to values of 15-25 in transition metal and rare earth ox