✦ LIBER ✦
The fabrication of back-gated high electron mobility transistors — a novel approach using MBE regrowth on an in situ ion beam patterned epilayer
✍ Scribed by E.H. Linfield; G.A.C. Jones; D.A. Ritchie; A.R. Hamilton; N. Iredale
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 459 KB
- Volume
- 127
- Category
- Article
- ISSN
- 0022-0248
No coin nor oath required. For personal study only.