A study of static RAM cell using the lam
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Manju Sarkar; M. Satyam; A. Prabhakar
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Article
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1997
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Elsevier Science
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English
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The bistable element of an SRAM cell, comprised the LBT in the common-collector configuration along with a couple of polysilicon resistors (as proposed in the literature), has been studied. Under the present study a similar case has been visualized and studied with the LBT in commonemitter configura